Research
The development of mid-infrared optoelectronic devices at Lancaster is based on the epitaxial growth of novel III-V compound nanostructures and alloys using MBE and LPE technology. This mid-infrared spectral region is of enormous interest as the practical realisation of optoelectronic devices operating in the 2-10 µm wavelength range offers potential applications in a wide variety of areas. See here for a brief introduction to the use of mid-infrared optoelectronics.
Lancaster is an active member of the mid-infrared community. The research activity was started in 1990 by Tony Krier who is also the founder of the mid-infrared optoelectronics materials & devices (MIOMD) conference and the Mid-infrared network.
Our research activities include:- Mid-Infrared Diode Lasers
- Mid-infrared LEDs and Photo-detectors
- Novel InSb/InAsSb Quantum Dot Nanostructures for Mid-infrared Lasers
- Room temperature mid-infrared diode lasers based on novel 5-component III-V alloys
- InAsN dilute Nitride materials for MIR applications
- LPE growth of quantum dot nanostructures for mid-infrared sources
- Low Bandgap Thermo-photovoltaic cells for Clean Energy Generation from Waste Heat
- Dilute Nitride Type-II QD materials for solar cells