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Dr Qian-Dong Zhuang

Lecturer

Qian-Dong Zhuang

Room: C37 Physics Building
Tel: +44 (0)1524 594198
Fax: +44 (0)1524 844037
Email: q.zhuang@lancaster.ac.uk

Dr Zhuang gained his PhD from the Institute of Semiconductors, Chinese Academy of Sciences, China in 1999, for the research into the molecular beam epitaxy (MBE) grown low-dimensional compound semiconductors and its applications for optoelectronics. Since then, He worked at Nanyang Technological University, Singapore as a Research Fellow to investigate InAs/GaAs quantum dots photodetectors and lasers. In 2001, He joined MBE group at the University of Glasgow, to exclusively exploit a new class semiconductor: dilute nitride, for VCSELs for optical telecommunications. During the time at Glasgow, he was also responsible for supplying wide range of high quality epitaxial wafers to commercial customers. In 2003, He joined Lancaster University as a lecturer. He established the MBE Laboratory in the Physics Department, and is leading the research activities of MBE growth in the group of Semiconductor Physics and Nanostructures.

Research

His research is focused on semiconductor nanostructures and physics, including MBE growth, semiconductor characterization and devices containing nanostructures:

  • MBE growth of compound semiconductors: arsenide, antimonide and dilute nitride;
  • MBE growth of quantum structures including InAs/GaAs, GaSb/GaAs, InSb/InAs quantum dots;
  • MBE growth of wide bandgap nitride alloy, quantum wells and nanowires;
  • Semiconductor characterization by apparatuses of DCXRD, photoluminescence, Hall measurement, AFM, SEM, and TEM etc.;
  • Optoelectronic devices including VCSELs and Lasers for telecommunications; mid-infrared LEDs and photodetectors; high efficiency solar cells

Current Research Grants

  • High-tech EU Postgraduate Training Programme: Postgraduate Research on Photonics as an Enabling Technology (PROPHET) (EU FP7 Marie Curie Actions, 2011-2014)
  • High performance 1.55 µm InGaAsNSb MQW lasers for telecoms (Industrial Studentship, Oclaro, 2010-2013)
  • Dilute nitride type II quantum dot materials for solar cells based on GaAs - Collaborative Research in Energy with South Africa (C, EPSRC: EP/G070334/1, 2009-2012)
  • Coupling of single quantum dots to two-dimensional systems (C, EPSRC, EP/H006419/1, 2009-2012)

Previous Research Grants

  • Liquid Phase Epitaxial Growth of Dilute Nitrides for the Mid-infrared - Visiting Fellowship for S. Dhar (C, EPSRC, EP/G000190/1, 2008-2010)
  • Novel InSb/InAsSb Quantum Dot Nanostructures for Mid-infrared Laser Applications (C, EPSRC, EP/E028209/1, 2007-2008)
  • Room-temperature mid-infrared diode photodetectors based on MBE grown InNAs/InAs alloys (P, EPSRC, EP/C001699/1, 2004-2008)
  • MBE Grown InNAsSb/InP Quantum wells for Mid-infrared LEDs and Lasers (University Small Grant: 2004-2005)

PhD and Postdoctoral Opportunities

We are expending our research activities and always looking for students with high academic records for PhD study (EPSRC DTA studentship, Overseas Studentship and LU Faculty Overseas Studentship), we also welcome high respect researchers for postdoctoral posts. Please feel free to contact me for details.

Collaborations and Visitors

We established wide national and international collaborations for instance, Nottingham University, Surrey University, Hull University, Warwick University, Wroclaw University of Technology (Poland), Nanyang Technological University (Singapore), Taiwan National University (Taiwan). In addition, we have close industrial collaborations with QinetiQ and Oclaro. We are keen to develop international collaborations and to host high respect researchers and scientists as Academic Visitors. In the last a few years, we had visitors from China, India and Russia. Please get in touch if you are interested.

Teaching Duties

  • Optics & Optical Instruments (PHY135)
  • First Year Laboratory (PHY135)
  • Head of Second Year Laboratory (PHY253, 254 & 255)
  • Semiconductor Device Physics (PHY487)
  • Tutor for First Year students
  • MPhys supervision

Recent Publications

  • O. Drachenko, A. Patanč, N. V. Kozlova, Q. D. Zhuang, A. Krier, L. Eaves, and M. Helm, Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy, Appl. Phys. Lett. 98, 162109 (2011)
  • M. Ahmad Kamarudin, M. Hayne, R. J. Young, Q. D. Zhuang, T. Ben, and S. I. Molina, Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings, Phys. Rev. B 83, 115311 (2011)
  • J. Ibáńez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier, "Structural and optical properties of dilute InAsN grown by molecular beam epitaxy", J. Appl. Phys. 108, 103504 (2010)
  • O. Makarovsky, W. H. M. Feu, A. Patanč, L. Eaves, Q. D. Zhuang, A. Krier, R. Beanland, and R. Airey, "Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy", Appl. Phys. Lett. 96, 052115 (2010)
  • M de la Mare, P J Carrington, R Wheatley, Q Zhuang, R Beanland, A M Sanchez and A Krier , "Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range", J. Phys. D: Appl. Phys. 43 345103 (2010)
  • O. Makarovsky, W.H.M. Feu, A. Patanč, L. Eaves Q.D. Zhuang, A. Krier, R. Beanland and R. Airey, "Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy", Appl. Phys. Lett. 96, 052115 (2010)
  • M. Ahmad Kamarudin, M. Hayne, Q. Zhuang, O. Kolosov, T. Nuytten, V.V. Moshchalkov, F. Dinelli, "GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer", J. Phys. D: Appl. Phys. 43 065402 (2010)
  • A. Patanč, W.H.M. Feu, O. Makarovsky, O. DrachenkoL. Eaves, A. Krier, Q.D. Zhuang, M. Helm, M. Goiran, and G. Hill, "Effect of low nitrogen concentrations on the electronic properties of InAs(1-x)Nx", Phys. Rev. (B) 80, 115207 (2009)
  • Rui Chen, S. Phann, H. D. Sun, Q. Zhuang, A. M. R. Godenir and A. Krier Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth, Appl. Phys. Lett. 95, 261905 (2009)
  • Q. Zhuang, A. Krier, "The molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications", IET Optoelectronics (invited paper)
  • Martin de la Mare, Q. Zhuang, A. Krier, A. Patane , S. Dhar, "Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the mid-Infrared spectral range", Appl. Phys. Lett. 95, 031110 (2009)
  • P.J. Carrington, Q Zhuang, A Krier, "Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes, Semicond. Sci. Technol. 24 (2009) 075001 (2009)
  • R. Kudrawiec, J. Misiewicz, Q. Zhuang, A. M. R. Godenir and A. Krier, "Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys", Appl. Phys. Lett. 94, 151902 (2009)
  • P.J. Carrington, V.A. Solov’ev, Q. Zhuang, S.V. Ivanov, A. Krier, "InSb Quantum Dot LEDs Grown by Molecular Beam Epitaxy for Mid-infrared Applications", Microelectronics Journal 40 469 (2009).
  • A. Patanč, G. Allison, L. Eaves, N. V. Kozlova, Q. D. Zhuang, A. Krier, M. Hopkinson and G. Hill "Electron coherence length and mobility in highly mismatched III-N-V alloys", Appl. Phys. Lett. 93, 252106 (2008).
  • Q. Zhuang, P. J. Carrington, A. Krier, "Growth optimisation of self-organized InSb/InAs quantum dots", J. Phys. D: Applied Physics 41 232003 (2008)
  • Q. Zhuang, A. Godenir, A. Krier, G. Tsai and H. H. Lin, "Molecular Beam Epitaxial Growth of InAsN:Sb for Mid-infrared Optoelectronics", Appl. Phys. Lett. 93, 121903 (2008).
  • P.J. Carrington, V.A. Solov'ev, Q. Zhuang, A. Krier, S.V. Ivanov, "Room Temperature Mid-infrared Electroluminescence from InSb/InAs Quantum Dot Light Emitting Diodes", Appl. Phys. Lett. 93, 091101 (2008).
  • Q. Zhuang, A Godenir and A Krier, "Photoluminescence in InAsN epilayers grown by molecular beam epitaxy", J. Phys. D: Applied Physics, 41 132002 (2008).
  • Q. Zhuang, A. M. R. Godenir, A. Krier, K. T. Lai, and S. K. Haywood, "Room temperature photoluminescence at 4.5 µm from InAsN", J. Appl. Phys. 103, 063520 (2008).
  • S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance, Thin Solid Films 516, 8049-8058 (2008)
  • S. A. Cripps, and T. J. C. Hosea, A. Krier, V. Smirnov, P.J. Batty and Q.D. Zhuang, Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy, Appl. Phys. Lett. 90, 172106 (2007)
  • Q Zhuang, C Stanley, A Krier, Strain enhancement during annealing of GaAsN alloys, J. Appl. Phys, 101, 103536 (2007).
  • A. Krier, M. Stone & Q. D. Zhuang, Po-Wei Liu, G. Tsai & H. H. Lin, Mid-infrared Electroluminescence at Room Temperature from InAsSb Multi-quantum Well Light Emitting Diodes, Appl. Phys. Lett. 89, 091110 (2006)
  • Po-Wei Liu, G. Tsai & H. H. Lin, A. Krier, Q.D. Zhuang & M. Stone, Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy, Appl. Phys. Lett. 89 (20), 201115, (2006)