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Professor Anthony Krier

Professor Anthony Krier

Professor

A34 Physics Building
Lancaster University
Bailrigg
Lancaster
United Kingdom
LA1 4YB

+44 (0)1524 593651

Research Interests

  • Narrow gap semiconductors and nanostructures - antimonides and dilute nitrides
  • Mid-infrared (2-5μm) optoelectronic devices - diode lasers, LEDs & photodetectors
  • Molecular beam and Liquid Phase Epitaxial growth - MBE & LPE
  • Solar cells and Thermophotovoltaics

Anthony Krier's Publications

2014

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A. 08/2014 In : Semiconductor Science and Technology. 29, 8, 7 p.085010

Research output: Contribution to journalJournal article

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A. 12/05/2014 In : Semiconductor Science and Technology. 29, 7, 8 p.075011

Research output: Contribution to journalJournal article

2013

Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A. 31/07/2013 In : Journal of Physics D-Applied Physics. 46, 30, 6 p.305104

Research output: Contribution to journalJournal article

Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A. 03/2013 In : Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

Research output: Contribution to journalJournal article

2012

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A. 3/12/2012 In : Applied Physics Letters. 101, 23, 5 p.231101

Research output: Contribution to journalJournal article

Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

De La Mare, M., Zhuang, Q., Krier, A. & Patane, A. 3/10/2012 In : Journal of Physics D-Applied Physics. 45, 39, p. 395103-395105 3 p.

Research output: Contribution to journalJournal article

Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A. 2/10/2012 In : Nature Communications. 3, 5 p.1097

Research output: Contribution to journalJournal article

Development of dilute nitride materials for mid-infrared diode lasers

Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R. 09/2012 In : Semiconductor Science and Technology. 27, 9, 8 p.094009

Research output: Contribution to journalJournal article

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A. 15/05/2012 In : Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

Research output: Contribution to journalJournal article

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A. 01/2012 In : Infrared physics & technology. 55, 1, p. 156-160 5 p.

Research output: Contribution to journalJournal article

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L. 01/2012 In : Semiconductor Science and Technology. 27, 1, p. - 4 p.015004

Research output: Contribution to journalJournal article

Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P. 2012 NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2011

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J. 3/10/2011 In : Applied Physics Letters. 99, 14, p. - 3 p.141110

Research output: Contribution to journalJournal article

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A. 10/08/2011 In : Journal of Physics D-Applied Physics. 44, 31, p. - 7 p.315102

Research output: Contribution to journalJournal article

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder) 04/2011 In : Applied Physics Letters. 98, 16, p. 162109

Research output: Contribution to journalJournal article

Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder) 2/03/2011 In : Journal of Physics D-Applied Physics. 44, 8, p. 085405

Research output: Contribution to journalJournal article

Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A. 02/2011 In : Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

Research output: Contribution to journalJournal article

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A. 2011 In : Proceedings- Spie the International Society for Optical Engineering. 7945, 79450L

Research output: Contribution to journalJournal article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A. 2011 In : Advances in OptoElectronics. 2011, n/a, 8 p.145012

Research output: Contribution to journalJournal article

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A. 2011 In : Applied Physics Letters. 99, 1, 3 p.011904

Research output: Contribution to journalJournal article

2010

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder) 11/2010 In : Journal of Applied Physics. 108, 10, p. 103504

Research output: Contribution to journalJournal article

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder) 1/09/2010 In : Journal of Physics D-Applied Physics. 43, 34, p. 345103

Research output: Contribution to journalJournal article

Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R. 1/02/2010 In : Applied Physics Letters. 96, 5, p. 052115

Research output: Contribution to journalJournal article

2009

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A. 28/12/2009 In : Applied Physics Letters. 95, 26, p. 261905

Research output: Contribution to journalJournal article

Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

Zhuang, Q. & Krier, A. 15/12/2009 In : IET Optoelectronics. 3, 6, p. 248-258 11 p.

Research output: Contribution to journalJournal article

Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G. 16/09/2009 In : Physical Review B. 80, 11, p. 115207

Research output: Contribution to journalJournal article

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S. 22/07/2009 In : Applied Physics Letters. 95, 3, p. 031110

Research output: Contribution to journalJournal article

Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Cook, N. B. & Krier, A. 13/07/2009 In : Applied Physics Letters. 95, 2, p. 021110

Research output: Contribution to journalJournal article

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A. 07/2009 In : Semiconductor Science and Technology. 24, 7, p. 075001

Research output: Contribution to journalJournal article

Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A. 14/04/2009 In : Applied Physics Letters. 94, 15, p. 151902

Research output: Contribution to journalJournal article

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T. 5/03/2009 In : Applied Physics Letters. 94, 9, p. 091111

Research output: Contribution to journalJournal article

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A. 03/2009 In : Microelectronics Journal. 40, 3, p. 469-472 4 p.

Research output: Contribution to journalJournal article

Magnetoresistance and electron mobility in dilute nitride InAsN alloys

Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G. 2009 In : AIP Conference proceedings. 1288

Research output: Contribution to journalJournal article

Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T. 2009 Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, p. 2813-2814 2 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2008

Electron coherence length and mobility in highly mismatched III-N-V alloys.

Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G. 23/12/2008 In : Applied Physics Letters. 93, 25, p. 252106

Research output: Contribution to journalJournal article

Growth optimization of self-organized InSb/InAs quantum dots.

Zhuang, Q., Carrington, P. J. & Krier, A. 13/11/2008 In : Journal of Physics D-Applied Physics. 41, 23, 4 p.232003

Research output: Contribution to journalJournal article

Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G. 30/09/2008 In : Thin Solid Films. 516, 22, p. 8049-8058 10 p.

Research output: Contribution to journalJournal article

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T. 23/09/2008 In : Applied Physics Letters. 93, 12, p. 121106

Research output: Contribution to journalJournal article

Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H. 22/09/2008 In : Applied Physics Letters. 93, 12, p. 121903

Research output: Contribution to journalJournal article

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V. 1/09/2008 In : Applied Physics Letters. 93, 9, p. 091101

Research output: Contribution to journalJournal article

Properties of dilute InAsN layers grown by liquid phase epitaxy.

Dhar, S., Das, T. D., de la Mare, M. & Krier, A. 22/08/2008 In : Applied Physics Letters. 93, 7, p. 071905

Research output: Contribution to journalJournal article

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Zhuang, Q., Godenir, A. & Krier, A. 10/06/2008 In : Journal of Physics D-Applied Physics. 41, 13, p. 132002

Research output: Contribution to journalJournal article

Room temperature photoluminescence at 4.5 mu m from InAsN

Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K. 26/03/2008 In : Journal of Applied Physics. 103, 6, p. 063520

Research output: Contribution to journalJournal article

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A. 1/02/2008 In : Proceedings- Spie the International Society for Optical Engineering. 6900, 69000I

Research output: Contribution to journalJournal article

The development of room temperature LEDs and lasers for the mid-infrared spectral range.

Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V. 01/2008 In : physica status solidi (a). 205, 1, p. 129-143 15 p.

Research output: Contribution to journalJournal article

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E. 2008 NARROW GAP SEMICONDUCTORS 2007. Murdin, B. N. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.

Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E. 2008 Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 69-72 4 p. (Springer Proceedings in Physics)

Research output: Contribution in Book/Report/ProceedingsChapter

Electroluminescence from InSb-based mid-infrared quantum well lasers.

Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T. 2008 Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 159-161 3 p. (Springer Proceedings in Physics)

Research output: Contribution in Book/Report/ProceedingsChapter

Growth of InAsSb quantum wells by liquid phase epitaxy.

Yin, M., Krier, A. & Jones, R. 2008 Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 65-68 4 p. (Springer Proceedings in Physics)

Research output: Contribution in Book/Report/ProceedingsChapter

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A. 2008 NARROW GAP SEMICONDUCTORS 2007. Murdin, B. N. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.

Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A. 2008 Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics)

Research output: Contribution in Book/Report/ProceedingsChapter

2007

Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T. & Ashley, T. 24/09/2007 In : Applied Physics Letters. 91, 13, p. 131118

Research output: Contribution to journalJournal article

Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

Yin, M., Krier, A., Jones, R. & Carrington, P. 3/09/2007 In : Applied Physics Letters. 91, 10, 101104

Research output: Contribution to journalJournal article

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I. 20/08/2007 In : Applied Physics Letters. 91, 8, p. 082102

Research output: Contribution to journalJournal article

Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

Krier, A., Stone, M. & Krier, S. E. 06/2007 In : Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

Research output: Contribution to journalJournal article

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I. 21/05/2007 In : Applied Physics Letters. 90, 21, p. 211115

Research output: Contribution to journalJournal article

Strain enhancement during annealing of GaAsN alloys.

Zhuang, Q. D., Krier, A. & Stanley, C. R. 15/05/2007 In : Journal of Applied Physics. 101, 10, p. 103536

Research output: Contribution to journalJournal article

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G. 24/04/2007 In : Applied Physics Letters. 92, 17, p. 172106

Research output: Contribution to journalJournal article

GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I. 04/2007 In : physica status solidi (a). 204, 4, p. 1047-1050 4 p.

Research output: Contribution to journalJournal article

Physical working principles of semiconductor disk lasers. .

Averkiev, N. S., Sherstnev, V. V., Monakhov, A. M., Grebenshikova, E. A., Kislyakova, A. Y., Yakovlev, Y. P., Krier, A. & Wright, D. A. 02/2007 In : Low Temperature Physics. 33, 2-3, p. 283-290 8 p.

Research output: Contribution to journalJournal article

Mode behavior in InAs midinfrared whispering gallery lasers.

Norris, G., Krier, A., Sherstnev, V. V., Monakhov, A. & Baranov, A. 1/01/2007 In : Applied Physics Letters. 90, 1, p. 011105

Research output: Contribution to journalJournal article

FDTD modelling of mid infrared disk lasers

Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G. 2007 ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.

Research output: Contribution in Book/Report/ProceedingsPaper

Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808

Yin, M. & Krier, A. 2007 TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. Titterton, D. H. & Richardson, M. A. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 73808-73808 9 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

Smirnov, V. M., Batty, P. J., Krier, A. & Jones, R. 2007 Quantum Sensing and Nanophotonic Devices IV. Razeghi, M. & Brown, G. J. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 47918-47918 8 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2006

Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M. 13/11/2006 In : Applied Physics Letters. 89, 20, p. 201115

Research output: Contribution to journalJournal article

Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H. 28/08/2006 In : Applied Physics Letters. 89, 9, p. 091110

Research output: Contribution to journalJournal article

Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

Krier, A. & Suleiman, W. 21/08/2006 In : Applied Physics Letters. 89, 8, p. 083512

Research output: Contribution to journalJournal article

Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

Krier, A. & Huang, X. L. 21/01/2006 In : Journal of Physics D-Applied Physics. 39, 2, p. 255-261 7 p.

Research output: Contribution to journalJournal article

Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D. 2006 Technologies for Optical Countermeasures III. Titterton, D. H. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

Mid-infrared diode lasers for free space optical communications

Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P. 2006 Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, L. J., Wilson, R. A. & Merlet, T. J. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

2005

Semiconductor WGM lasers for the mid-IR spectral range

Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G. 09/2005 In : SEMICONDUCTORS. 39, 9, p. 1087-1092 6 p.

Research output: Contribution to journalJournal article

Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

Krier, A. & Huang, X. L. 7/02/2005 In : Applied Physics Letters. 86, 6, p. 061113

Research output: Contribution to journalJournal article

InAs whispering gallery mode lasers for the mid-infrared spectral range. .

Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A. 02/2005 In : IEE PROCEEDINGS-OPTOELECTRONICS. 152, 1, p. 1-5 5 p.

Research output: Contribution to journalJournal article

2004

Fundamental physics and practical realisation of mid-infrared photodetectors.

Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V. 10/2004 In : Proceedings- Spie the International Society for Optical Engineering. 5564, p. 92-104 13 p.

Research output: Contribution to journalJournal article

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

Moiseev, K. D., Krier, A. & Yakovlev, Y. P. 08/2004 In : JOURNAL OF ELECTRONIC MATERIALS. 33, 8, p. 867-872 6 p.

Research output: Contribution to journalJournal article

Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P. 5/05/2004 In : IEEE ELECTRON DEVICE LETTERS. 25, 5, p. 283-285 3 p.

Research output: Contribution to journalJournal article

The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

Monakhov, A., Krier, A. & Sherstnev, V. V. 03/2004 In : Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

Research output: Contribution to journalJournal article

Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Nohavica, D. & Krier, A. 2004 ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2003

Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

Chakrabarti, P., Krier, A. & Morgan, A. F. 1/10/2003 In : IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

Research output: Contribution to journalJournal article

Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

Chakrabarti, P., Krier, A. & Morgan, A. F. 1/09/2003 In : OPTICAL ENGINEERING. 42, 9, p. 2614-2623 10 p.

Research output: Contribution to journalJournal article

Mid-infrared whispering gallery mode ring lasers and LEDs. .

Wright, D. A., Sherstnev, V. V., Krier, A., Monakhov, A. M. & Hill, G. 08/2003 In : IEE PROCEEDINGS-OPTOELECTRONICS. 150, 4, p. 314-317 4 p.

Research output: Contribution to journalJournal article

The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

Krier, A. & Sherstnev, V. V. 7/07/2003 In : Journal of Physics D-Applied Physics. 36, 13, p. 1484-1488 5 p.

Research output: Contribution to journalJournal article

Mid-infrared ring laser. .

Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M. & Hill, G. 12/06/2003 In : Electronics Letters. 39, 12, p. 916-917 2 p.

Research output: Contribution to journalJournal article

Mid-infrared lasing induced by noise.

Sherstnev, V. V., Krier, A., Balanov, A. G., Janson, N. B., Silchenko, A. N. & McClintock, P. V. E. 03/2003 In : Fluctuation and Noise Letters. 3, 1, p. L91-L95

Research output: Contribution to journalJournal article

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V. 24/02/2003 In : Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

Research output: Contribution to journalJournal article

The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V. 1/02/2003 In : physica status solidi (b). 235, 2, p. 312-316 5 p.

Research output: Contribution to journalJournal article

Interface luminescence and lasing at a type II single broken-gap heterojunction

Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A. 2003 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, Z. I. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.

Research output: Contribution in Book/Report/ProceedingsPaper

Mid-infrared whispering gallery lasers

Wright, D. A., Krier, A., Sherstnev, V. V. & Monakhov, A. 2003 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2. NEW YORK: IEEE, p. 280-280 1 p.

Research output: Contribution in Book/Report/ProceedingsPaper

Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P. & Lal, R. K. 2003 PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. Kalinowski, H. J., Romero, M. A. & Barbin, S. E. (eds.). NEW YORK: IEEE, p. 87-92 6 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2002

Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A. 7/12/2002 In : Journal of Physics D-Applied Physics. 35, 23, p. 3091-3095 5 p.

Research output: Contribution to journalJournal article

Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

Krier, A. & Huang, X. L. 11/2002 In : Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

Research output: Contribution to journalJournal article

Tuning characteristics of InAsSb continuous-wave lasers. .

Sherstnev, V., Krier, A., Popov, A. & Werle, P. 20/05/2002 In : Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

Research output: Contribution to journalJournal article

Optical switching in midinfrared light-emitting diodes .

Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G. 22/04/2002 In : Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

Research output: Contribution to journalJournal article

Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P. 7/04/2002 In : Journal of Physics D-Applied Physics. 35, 7, p. 631-636 6 p.

Research output: Contribution to journalJournal article

High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

Sherstnev, V. V., Krier, A. & Hill, G. 7/02/2002 In : Journal of Physics D-Applied Physics. 35, 3, p. 196-198 3 p.

Research output: Contribution to journalJournal article

General theory of multi-phase melt crystallization. .

Charykov, N. A., Sherstnev, V. V. & Krier, A. 02/2002 In : Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

Research output: Contribution to journalJournal article

Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Krier, A. & Huang, X. L. 2002 Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2001

Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

Moiseev, K. D., Krier, A. & Yakovlev, Y. P. 15/10/2001 In : Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

Research output: Contribution to journalJournal article

Liquid phase epitaxial growth and morphology of InSb quantum dots. .

Krier, A., Huang, X. L. & Hammiche, A. 21/03/2001 In : Journal of Physics D-Applied Physics. 34, 6, p. 874-878 5 p.

Research output: Contribution to journalJournal article

Physics and technology of mid-infrared light emitting diodes. .

Krier, A. 15/03/2001 In : Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

Research output: Contribution to journalJournal article

LEDs for formaldehyde detection at 3.6 mu m. .

Krier, A. & Sherstnev, V. V. 7/02/2001 In : Journal of Physics D-Applied Physics. 34, 3, p. 428-432 5 p.

Research output: Contribution to journalJournal article

Investigation on InGaAs/InAlAs quantum cascade lasers.

Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A. 2001 In : Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

Research output: Contribution to journalJournal article

Mid-infrared lasers operating on a single quantum well at the type II heterointerface

Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A. 2001 LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2, p. 534-535 2 p.

Research output: Contribution in Book/Report/ProceedingsPaper

2000

Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H. 21/12/2000 In : Journal of Physics D-Applied Physics. 33, 24, p. 3156-3160 5 p.

Research output: Contribution to journalJournal article

Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G. 11/12/2000 In : Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

Research output: Contribution to journalJournal article

Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

Krier, A., Huang, X. L. & Hammiche, A. 4/12/2000 In : Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

Research output: Contribution to journalJournal article

Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C. 16/10/2000 In : MATERIALS CHEMISTRY AND PHYSICS. 66, 2 - 3, p. 207-212 6 p.

Research output: Contribution to journalJournal article

Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Krier, A., Krier, S. E. & Labadi, Z. 09/2000 In : Applied Physics A: Materials Science and Processing . 71, 3, p. 249-253 5 p.

Research output: Contribution to journalJournal article

Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

Gao, H. H., Krier, A. & Sherstnev, V. V. 7/08/2000 In : Applied Physics Letters. 77, 6, p. 872-874 3 p.

Research output: Contribution to journalJournal article

A novel LED module for the detection of H2S at 3.8 mu m. .

Krier, A., Sherstnev, V. V. & Gao, H. H. 21/07/2000 In : Journal of Physics D-Applied Physics. 33, 14, p. 1656-1661 6 p.

Research output: Contribution to journalJournal article

Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

Krier, A., Gao, H. H. & Sherstnev, V. V. 06/2000 In : IEE PROCEEDINGS-OPTOELECTRONICS. 147, 3, p. 217-221 5 p.

Research output: Contribution to journalJournal article

Modelling of InAs thin layer growth from the liquid phase. .

Krier, A. & Labadi, Z. 06/2000 In : IEE PROCEEDINGS-OPTOELECTRONICS. 147, 3, p. 222-224 3 p.

Research output: Contribution to journalJournal article

Powerful interface light emitting diodes for methane gas detection. .

Krier, A. & Sherstnev, V. V. 21/01/2000 In : Journal of Physics D-Applied Physics. 33, 2, p. 101-106 6 p.

Research output: Contribution to journalJournal article

1999

High power 4.6 mu m light emitting diodes for CO detection. .

Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y. 21/12/1999 In : Journal of Physics D-Applied Physics. 32, 24, p. 3117-3121 5 p.

Research output: Contribution to journalJournal article

InAsSbP quantum dots grown by liquid phase epitaxy

Krier, A., Labadi, Z. & Hammiche, A. 21/10/1999 In : Journal of Physics D-Applied Physics. 32, 20, p. 2587-2589 3 p.

Research output: Contribution to journalJournal article

InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y. 7/08/1999 In : Journal of Physics D-Applied Physics. 32, 15, p. 1768-1772 5 p.

Research output: Contribution to journalJournal article

Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

Krier, A., Gao, H. H. & Sherstnev, V. V. 15/06/1999 In : Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.

Research output: Contribution to journalJournal article

Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

Iraqi, A., Clark, D., Jones, R. & Krier, A. 06/1999 In : Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

Research output: Contribution to journalJournal article

High quality InAs grown by liquid phase epitaxy using gadolinium gettering

Gao, H. H., Krier, A. & Sherstnev, V. V. 05/1999 In : Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

Research output: Contribution to journalJournal article

Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J. 26/02/1999 In : Thin Solid Films. 340, 1-2, p. 221-229 9 p.

Research output: Contribution to journalJournal article

1998

Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G. 10/1998 In : IEE PROCEEDINGS-OPTOELECTRONICS. 145, 5, p. 292-296 5 p.

Research output: Contribution to journalJournal article

Rapid slider LPE growth of InAs quantum wells

Krier, A., Labadi, Z. & Richardson, J. 10/1998 In : IEE PROCEEDINGS-OPTOELECTRONICS. 145, 5, p. 297-301 5 p.

Research output: Contribution to journalJournal article

Anthony Krier's Projects

2006