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Dr Andrew Marshall

Dr Andrew Marshall

Research Fellow

B73 Physics Building
Lancaster University
Bailrigg
Lancaster
United Kingdom
LA1 4YB

+44 (0)1524 594072

My research is focused on novel materials and structures for next generation electronic devices, including photodetectors, solar cells and thermo photovoltaics. Currently I am developing the mismatched growth of GaSb and InAs based materials with atomically abrupt interfaces on GaAs and Silicon substrates, including studying the properties of the novel hetero-lattice interfaces formed and exciting new devices exploiting this technology in collaboration with my industrial partners. I am also developing the micro and nanoscale fabrication of novel devices using the new state of the art facilities within the Lancaster Quantum Technology Centre.

Career Details

During my early career I worked in the large multi-national companies, Ford and Visteon. As a result I intimately understand the requirements of companies right from business planning, through design into manufacturing. This helps me relate my research to industry and work with my industrial partners. After leading the development team on a $100million program I returned to academia to undertake a PhD and briefly work as a contracted research fellow. In 2010 I won a prestigious 5 year Royal Academy of Engineering / EPSRC Research Fellowship and moved my research to the Physics department at Lancaster University.

Research Grants

Royal Academy of Engineering / EPSRC research fellowship – Exploiting Emerging Interface Misfit Epitaxy

EPSRC - InAsNSb Dilute Nitride Materials for Mid-infrared Devices and Applications

Business and Enterprise

I collaborate with a range of companies and am always interested to expand this where I am able to offer an advantage to an industrial partner.

Professional Role

Following my time in industry I am a chartered engineer

External Roles

 Reviewer for various IEEE and AIP journals.

Current Teaching

 Second year laboratories and 4th year MPhys projects.

Andrew Marshall's Publications

2012

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Green, J. E., Loh, W. S., Marshall, A. R. J., Ng, B. K., Tozer, R. C., David, J. P. R., Soloviev, S. I. & Sandvik, P. M. 04/2012 In : IEEE Transactions on Electron Devices. 59, 4, p. 1030-1036 7 p.

Research output: Contribution to journalJournal article

Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Nunna, K. C., Tan, S. L., Reyner, C. J., Marshall, A. R. J., Liang, B., Jallipalli, A., David, J. P. R. & Huffaker, D. L. 1/02/2012 In : Ieee photonics technology letters. 24, 3, p. 218-220 3 p.

Research output: Contribution to journalJournal article

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

Ker, P. J., Marshall, A. R. J., David, J. P. R. & Tan, C. H. 02/2012 In : Physica Status Solidi (C). 9, 2, p. 310-313 4 p.

Research output: Contribution to journalJournal article

2011

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Marshall, A. R. J., Ker, P. J., Krysa, A., David, J. P. R. & Tan, C. H. 7/11/2011 In : Optics Express. 19, 23, p. 23341-23349 9 p.

Research output: Contribution to journalJournal article

Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R. & Tan, C. H. 08/2011 In : Ieee journal of quantum electronics. 47, 8, p. 1123-1128 6 p.

Research output: Contribution to journalJournal article

Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

Marshall, A. R. J., Vines, P., Ker, P. J., David, J. P. R. & Tan, C. H. 06/2011 In : Ieee journal of quantum electronics. 47, 6, p. 858-864 7 p.

Research output: Contribution to journalJournal article

2010

Impact Ionization in InAs Electron Avalanche Photodiodes

Marshall, A. R. J., David, J. P. R. & Tan, C. H. 10/2010 In : IEEE Transactions on Electron Devices. 57, 10, p. 2631-2638 8 p.

Research output: Contribution to journalJournal article

High gain InAs electron-avalanche photodiodes for optical communication

Marshall, A. R. J., Vines, P., Xie, S., David, J. P. R. & Tan, C. H. 2010 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York: IEEE, p. - 4 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

2009

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R. 1/07/2009 In : Ieee photonics technology letters. 21, 13, p. 866-868 3 p.

Research output: Contribution to journalJournal article

2008

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R. 15/09/2008 In : Applied Physics Letters. 93, 11, p. - 3 p.111107

Research output: Contribution to journalJournal article

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

Mun, S. C. L. T., Tan, C. H., Goh, Y. L., Marshall, A. R. J. & David, J. P. R. 1/07/2008 In : Journal of Applied Physics. 104, 1, p. - 6 p.013114

Research output: Contribution to journalJournal article

Design considerations for In0.52Al0.48As based avalanche photodiodes

Mun, S. C. L. T., Tan, C. H., Marshall, A. R. J., Goh, Y. L., Tan, L. J. J. & David, J. P. R. 2008 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York: IEEE, p. 331-333 3 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

2007

Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H

Marshall, A. R. J., Tan, C. H., David, J. P. R., Ng, J. S. & Hopkinson, M. 10/2007 Optical Materials in Defence Systems Technology IV. Grote, J. G., Kajzar, F. & Lindgren, M. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING

Research output: Contribution in Book/Report/ProceedingsConference contribution

Avalanche multiplication in InAlAs

Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Ng, W. K., Rees, G. J., Hopkinson, A., David, J. P. R. & Jones, S. K. 01/2007 In : IEEE Transactions on Electron Devices. 54, 1, p. 11-16 6 p.

Research output: Contribution to journalJournal article

Excess avalanche noise in In0.52Al0.48As

Goh, Y. L., Marshall, A. R. J., Massey, D. J., Ng, J. S., Tan, C. H., Hopkinson, M., David, J. P. R., Jones, S. K., Button, C. C. & Pinches, S. M. 2007 In : Ieee journal of quantum electronics. 43, 5-6, p. 503-507 5 p.

Research output: Contribution to journalJournal article

Extremely low excess noise InAlAs avalanche photodiodes

Tan, C. H., Goh, Y. L., Marshall, A. R. J., Tan, L. J. J., Ng, J. S. & David, J. P. R. 2007 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York: IEEE, p. 81-83 3 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

2006

A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.

Marshall, A. R. J., Goh, Y. L., Tan, L. J. J., Tan, C. H., Ng, J. S. & David, J. P. R. 2006 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, p. 789-790 2 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

Excess noise and avalanche multiplication in InAlAs

Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Hopkinson, M. & David, J. P. R. 2006 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, p. 787-788 2 p.

Research output: Contribution in Book/Report/ProceedingsConference contribution

Andrew Marshall's Activities

2010

Reserch fellowship (5 years)

Dr Andrew Marshall (Recipient), 10/201010/2015

Activity: AwardsFellowship awarded competitively

Current Students

Research students currently supervised by Andrew Marshall include: