Condensed Matter Physics Seminar

Dr Tim Veal, Department of Physics, Liverpool University

Friday 14 February 2014, 1500-1600
C1 Physics Building

Growth and optical properties of antimonide-based highly mismatched semiconductor alloys

Abstract: Molecular beam epitaxy is used to grow films of gallium antimonide alloyed with nitrogen and bismuth atoms. This alloying enables the band gap to be tuned for different optoelectronic applications while producing only small changes to the lattice parameter. The different interactions of the nitrogen and bismuth states with the band structure of gallium antimonide are investigated using optical spectroscopy and k.P band structure modelling. In this talk, the growth, structural and compositional analysis and optical studies of these novel semiconductors will be described.